Interfacial reactions between liquid indium and nickel substrate

Citation
Yh. Tseng et al., Interfacial reactions between liquid indium and nickel substrate, J ELEC MAT, 28(2), 1999, pp. 105-108
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
2
Year of publication
1999
Pages
105 - 108
Database
ISI
SICI code
0361-5235(199902)28:2<105:IRBLIA>2.0.ZU;2-#
Abstract
The morphologies and growth kinetics of intermetallic compounds for the int erfacial reaction between liquid In and solid Ni substrate in the temperatu re range from 225 to 500 degrees C are examined in this study. Experimental results showed that the thickness of intermetallic compounds formed during the Ni-(s)/ In-(l) interfacial reaction increased with the reaction temper ature and the square root of reaction time. The x-ray diffraction pattern r evealed the formation of intermetallic compounds Ni10In27 (T<300 degrees C) and Ni2In3 (T>300 degrees C). Moreover, the activation energies for the in terdiffusion of Ni and In atoms in the Ni10In27 and Ni2In3 are 94.74 and 33 .51 kJ/mol, respectively. Using the Ta thin film as a diffusion mark, the f ormation mechanism of intermetallic compounds during interfacial reaction w as clarified.