An improved model for chip carrier at microwave frequencies

In PHEMT chip characterization, the parasitic elements due to the chip carr ier have to be de-embedded prior to the extraction of the intrinsic element s. At frequencies lower than 5 GHz, the chip carrier is modeled by a "pi" c apacitive network; however, at frequencies around 10 GHz, a resonance on th e Y-21-parameter of the chip carrier alone is observed, and the "pi" capaci tive circuit is no longer valid. In this work, an improved circuit for mode ling the chip carrier in the frequency range of 0.045-26.5 GH; is proposed. (C) 1999 John Wiley & Sons, Inc.