The initial stages of carbon alloying into the Si(001) surface are studied
by scanning tunneling microscopy (STM) and density functional theory. Carbo
n increases the surface roughness compared to the clean surface and induces
a c(4 x 4) reconstruction. To explain experimental observations, we propos
e a novel surface reconstruction model that involves pairing of Si dimers m
ediated by the presence of a complex of a C dimer and four nearest neighbor
subsurface C atoms. The model is backed by total energy and thermal stabil
ity simulations. Its calculated surface charge density agrees well with the
filled state STM images.