Dimer pairing on the C-alloyed Si(001) surface

Citation
O. Leifeld et al., Dimer pairing on the C-alloyed Si(001) surface, PHYS REV L, 82(5), 1999, pp. 972-975
Citations number
13
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
5
Year of publication
1999
Pages
972 - 975
Database
ISI
SICI code
0031-9007(19990201)82:5<972:DPOTCS>2.0.ZU;2-1
Abstract
The initial stages of carbon alloying into the Si(001) surface are studied by scanning tunneling microscopy (STM) and density functional theory. Carbo n increases the surface roughness compared to the clean surface and induces a c(4 x 4) reconstruction. To explain experimental observations, we propos e a novel surface reconstruction model that involves pairing of Si dimers m ediated by the presence of a complex of a C dimer and four nearest neighbor subsurface C atoms. The model is backed by total energy and thermal stabil ity simulations. Its calculated surface charge density agrees well with the filled state STM images.