Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

The gate bias dependence of the field-effect mobility in pentacene-based in sulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the ba nd gap. This understanding was used to design and fabricate IGFETs with mob ility of more than 0.3 square centimeter per volt per second and current mo dulation of 10(5), with the use of amorphous metal oxide gate insulators. T hese values were obtained at operating voltage ranges as low as 5 volts, wh ich are much smaller than previously reported results. An all-room-temperat ure fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at Lo w operating voltages for organic devices.