Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon

It is known that Er-ion implantation and O-ion coimplantation into an amorp hized Si layer affect the final Er concentration profile when the layer is subjected to solid-phase epitaxial (SPE) crystallization. This paper discus ses how this effect depends on dose, energy, temperature, and the parameter s of the segregation model, i. e., the transition layer width L and the coo rdinate dependence of the segregation coefficient k(x). Increasing the Er i mplantation dose as well as decreasing the implantation energy and temperat ure cause L to decrease and the segregation coefficient k to increase more rapidly at the initial stage of SPE crystallization. These phenomena could be due to increased defect formation in the amorphous implanted layer. Addi tional O coimplantation leads to similar changes in L and k(x), due to Er-O complex formation. (C) 1999 American Institute of Physics. [S1063-7826(99) 02401-1].