Silicon-glass wafer bonding with silicon hydrophilic fusion bonding technology

Citation
Zx. Xiao et al., Silicon-glass wafer bonding with silicon hydrophilic fusion bonding technology, SENS ACTU-A, 72(1), 1999, pp. 46-48
Citations number
14
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
72
Issue
1
Year of publication
1999
Pages
46 - 48
Database
ISI
SICI code
0924-4247(19990108)72:1<46:SWBWSH>2.0.ZU;2-F
Abstract
Silicon-glass wafer bonding is realized with silicon hydrophilic fusion bon ding technology. Tensile strength testing shows that the bonding strength i s large enough for most applications of integrated circuits and transducers . The bonding strengths of 4 in. 575 mu m thick #7740 glass-4 in. 525 mu m thick silicon and of 1.5 in. 1000 mu m thick #7740 glass-2 in. 380 mu m thi ck silicon are larger than 9 MPa both with an annealing temperature of 450 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.