F. Gourbilleau et al., Crystallization control of the amorphous buffer layer in hydrogenated nanocrystalline silicon, THIN SOL FI, 337(1-2), 1999, pp. 74-77
Hydrogenated nanocrystalline silicon film have been deposited by RF sputter
ing in a purl hydrogen plasma at a substrate temperature of 150 degrees C.
The unintentionally grown amorphous buffer layer was almost completely crys
tallized at an annealing temperature as low as 150 degrees C. By combining
infrared absorption measurements and electron microscopy observations, the
critical role of dihydride species, Si-H-2, in the crystallization process
have been clearly evidenced and discussed. (C) 1999 Elsevier Science S.A. A
ll rights reserved.