Stability of low pressure chemical vapour deposition amorphous silicon

The study of the influence of phosphorous doping and hydrogen content on tr ansport propel ties and thermally induced metastability of low pressure che mical vapour deposition a-Si is reported. Introduction of hydrogen causes c hange of dominant carrier transport mechanism at room temperature. The ther mally induced metastability was observed in both unhydrogenated and hydroge nated P-doped a-Si films. In this paper we report our studies on the effect of the thermally induced metastability in unhydrogenated and hydrogenated films of LPCVD a-Si, as a function of phosphorous concentration. (C) 1999 E lsevier Science S.A. All rights reserved.