Optical properties of LPCVD silicon oxynitride

Low pressure chemical vapour deposition (LPCVD) silicon oxynitride films of various compositions (from pure SiO2 to pure Si3N4) were deposited by chan ging the relative gas Bow ratio. The effects of oxygen on the physical prop erties of the films were studied by spectroellipsometry (using Bruggeman ap proximation and Wemple Di Domenico model) acid infrared spectroscopy. Refra ctive index measured by spectroellipsometry method is studied as a function of some deposition parameters: temperature of deposition, gases fluxes rat io. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index, The refracti ve index dispersion is studied by single-oscillator Wemple Di Domenico mode l. The optical band gap varies monotonically from 5 eV for silicon nitride, to 9eV for HTO LPCVD silicon dioxide and for the studied silicon oxynitrid e was found to be between 5 and 6 eV. (C) 1999 Elsevier Science S.A. AU rig hts reserved.