Transport properties of mu c-Si : H analyzed by means of numerical simulation

Microcrystalline silicon is a two-phase material. Its composition can be in terpreted as grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of danglind bonds in the transition regi ons. In this paper, results obtained by means of numerical simulations abou t the transport properties of a mu c-Si:H p-i-n junction are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken in account, and these regions are treated similar ly to a heterojunction interface. The influence of the local electric field at the grains boundary transition regions on the internal electric configu ration of the device is outlined under illumination and applied external bi as. (C) 1999 Elsevier Science S.A. All rights reserved.