Applicability of Raman scattering for the characterization of nanocrystalline silicon

Citation
C. Ossadnik et al., Applicability of Raman scattering for the characterization of nanocrystalline silicon, THIN SOL FI, 337(1-2), 1999, pp. 148-151
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
337
Issue
1-2
Year of publication
1999
Pages
148 - 151
Database
ISI
SICI code
0040-6090(19990111)337:1-2<148:AORSFT>2.0.ZU;2-M
Abstract
It is shown that Raman scattering alone cannot provide unambiguous informat ion regarding the crystallite size, its distribution and crystalline fracti on in nc-/a-Si films unless additional data regarding the structure of the films are obtained by other techniques. (C) 1999 Elsevier Science S.A. All rights reserved.