Citation
A. Kakanakova-georgieva et al., XPS characterization of tungsten-based contact layers on 4H-SiC, THIN SOL FI, 337(1-2), 1999, pp. 180-183
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
337
Issue
1-2
Year of publication
1999
Pages
180 - 183
Database
ISI
SICI code
0040-6090(19990111)337:1-2<180:XCOTCL>2.0.ZU;2-L
Abstract
Annealed W (WN)/4H-SiC interfaces have been compared on the basis of X-ray
photoelectron spectroscopy (XPS) studies. The 1200 degrees C annealed W (WN
)/4H-SiC structures are characterized by intense interface reactions leadin
g to tungsten carbide and tungsten silicide formation in the contact layers
. The 800 degrees C annealed WN/4H-SiC structure exhibits a chemically iner
t interface, and the 800 degrees C annealed WN/4H-SiC contact is found to b
e of a Schottky type with a barrier height of 0.94 eV and an ideality coeff
icient of 1.09. (C) 1999 Elsevier Science S.A. All rights reserved.