Coplanar amorphous silicon thin film transistor fabricated by inductively-coupled plasma CVD

Authors
Kim, SK Cho, SI Choi, YJ Cho, KS Pietruszko, SM Jang, J
Citation
Sk. Kim et al., Coplanar amorphous silicon thin film transistor fabricated by inductively-coupled plasma CVD, THIN SOL FI, 337(1-2), 1999, pp. 200-202
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
337
Issue
1-2
Year of publication
1999
Pages
200 - 202
Database
ISI
SICI code
0040-6090(19990111)337:1-2<200:CASTFT>2.0.ZU;2-3
Abstract
The electrical and optical properties of the a-Si:H films deposited by indu ctively-coupled plasma chemical vapour deposition (ICP-CVD) have been inves tigated. The ICP-CVD a-Si:H films deposited at 30 mTorr exhibited the depos ition rate of 0.9 Angstrom/s and the hydrogen content of 17 at.%. A novel c oplanar self-aligned a-Si:H thin film transistor has been fabricated using Ni-silicide gate and source/drain contacts. The coplanar a-Si:H TFT exhibit ed a field effect mobility of 0.6 cm(2/)Vs, a threshold voltage of 2.3 V, a subthreshold slope of 0.5 V/dec. (C) 1999 Elsevier Science S.A. All rights reserved.