Stability and quantum efficiency of a novel type of a-Si : H/a-SiC : H based UV detector

UV detectors based on a-Si:H/a-SiC:H were deposited by plasma enhanced chem ical vapor deposition and characterized in terms of their photoelectrical p roperties, A quantum efficiency of 90%. corresponding to 0.28 A/W, at 365 n m was measured for devices having p-layer and i-layer thickness less than 1 0 nm. A good uniformity (15%) was achieved on area of 5 x 5 cm, A linear de pendence of the photocurrent as a function of impinging photon flux, corres ponding to a constant responsivity, was found, Aging experiments were perfo rmed by UV irradiation both on devices and on thin films inserted in the de tectors with the aim of investigating the possible correlations. (C) 1999 E lsevier Science S.A. All rights reserved.