COMPRESSIVE AND TENSILE STRAIN EFFECTS ON ATOMIC DISTRIBUTION IN STRAINED SI-GE ALLOYS

The effects of compressive and extensive strain on the atomic distribu tion have been studied by Raman scattering. Compressive strain will ma ke the atoms distribute inhomogeneously and nonuniformly. This effect can be suppressed by increasing the substrate temperature or increasin g the Ge content in the Si-Ge alloy. The atoms are distributed uniform ly and randomly in extensively strained Ge-Si alloys.