ON THE MINIMUM IN THE FORWARD CAPACITANCE IN MIS TUNNEL-DIODES

The capacitance-voltage dependence of MIS tunnel diodes has been inves tigated and a new general expression for the forward capacitance is re ported. The calculated 1/C-2 plot exhibits a minimum at a specific val ue of the de voltage. This minimum position and the corresponding volt age value are found to be sensitive to the series resistance, the insu lator thickness and the doping concentration in the semiconductor. Kno wing the de current and the voltage at the minimum in the 1/C-2 versus voltage plot, the series resistance can be readily evaluated.