Wetting and bonding of Ni-Si alloys on silicon carbide

Authors
Rado, C Kalogeropoulou, S Eustathopoulos, N
Citation
C. Rado et al., Wetting and bonding of Ni-Si alloys on silicon carbide, ACT MATER, 47(2), 1999, pp. 461-473
Citations number
48
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science",Metallurgy
Journal title
ACTA MATERIALIA
ISSN journal
13596454 → ACNP
Volume
47
Issue
2
Year of publication
1999
Pages
461 - 473
Database
ISI
SICI code
1359-6454(19990115)47:2<461:WABONA>2.0.ZU;2-R
Abstract
Wetting (contact angles) and bonding (work of adhesion) of non-reactive bin ary Ni-Si alloys on basal planes of alpha-SiC are studied by the sessile dr op technique under high vacuum at 1633 K. The analysis of the experimental results by the Gibbs adsorption equation and by a statistical thermodynamic model allows the role of each component of the alloy on the interfacial en ergies of the system and on bonding to be determined. (C) 1999 Acta Metallu rgica Inc. Published by Elsevier Science Ltd. All rights reserved.