ELECTRICAL AND OPTICAL CHARACTERISTICS OF THE LAYER SEMICONDUCTOR P-GASE DOPED WITH AG

Authors
SHIGETOMI S IKARI T NAKASHIMA H
Citation
S. Shigetomi et al., ELECTRICAL AND OPTICAL CHARACTERISTICS OF THE LAYER SEMICONDUCTOR P-GASE DOPED WITH AG, Physica status solidi. a, Applied research, 160(1), 1997, pp. 159-164
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
160
Issue
1
Year of publication
1997
Pages
159 - 164
Database
ISI
SICI code
0031-8965(1997)160:1<159:EAOCOT>2.0.ZU;2-S
Abstract
Impurity levels in Ag-doped p-GaSe have been studied by using photolum inescence and Hall effect measurements. The PL spectra at 77K are domi nated by two ne rv emission bands at 2.02 and 1.74 eV. From the combin ed results of Hall effect and PL measurements, it is found that the 2. 02 and 1.74 eV emission bands are associated with the same acceptor le vel at 0.07 eV above the valence band, moreover, the 2.02 and 1.74 eV emission bands are caused by conduction band-acceptor and donor-accept or transitions, respectively.