Optical losses in plasma-etched AlGaAs microresonators using reflection spectroscopy

Citation
T. Rivera et al., Optical losses in plasma-etched AlGaAs microresonators using reflection spectroscopy, APPL PHYS L, 74(7), 1999, pp. 911-913
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
7
Year of publication
1999
Pages
911 - 913
Database
ISI
SICI code
0003-6951(19990215)74:7<911:OLIPAM>2.0.ZU;2-X
Abstract
The optical losses in dry-etched monolithic microresonators have been studi ed as a function of their lateral dimensions. Cylindrical microresonators w ith various radii have been etched from a planar GaAlAs/GaAs microcavity wi th a very high quality factor (Q congruent to 11 700). Measurements of the resonance linewidth, using Ti-sapphire laser spectroscopy allowed to study the degradation of the Q factor at small radii. The Q factor is four times smaller in 1.1 mu m radius microresonators, compared to the unprocessed cav ity. This degradation is attributed to optical scattering from sidewalls, w hose efficiency is shown to scale with the guided mode intensity at the mic roresonator edge. (C) 1999 American Institute of Physics. [S0003-6951(99)01 007-4].