Ultraviolet-light-enhanced luminescence in SiC thin films grown on Si by hot filament chemical vapor deposition and ultraviolet-light-induced luminescence in anodized SiC

Intense wide-band photoluminescence (PL) was observed at room temperature f rom both SiC thin films grown on silicon substrates by hot-filament chemica l vapor deposition and anodized SiC thin films formed by electrochemical an odization in HF-ethanol solution. It was found that prolonged irradiation w ith ultraviolet light from a He-Cd laser (325 nm, 10 mW) generally enhanced the PL intensity of as-grown SiC but induced a new PL band in anodized SiC at room temperature. The light-induced PL emission in anodized SiC was cen tered at the energy between 2.1 and 2.2 eV in comparison with the initial p eak position of about 1.9 eV. These effects were also temperature dependent . (C) 1999 American Institute of Physics. [S0003-6951(99)04106-6].