Enhancing defect-related photoluminescence by hot implantation into SiO2 layers

Visible photoluminescence around an orange band of 580 nm wavelength are ob served from 300 nm thin SiO2 layers implanted by Si or Ge ions at both subs trate temperatures of 25 degrees C [room temperature (RT)] and 400 degrees C (hot). Si implantations at an energy of 30 keV were performed with doses of 5 X 10(15), 3 X 10(16), and 1 X 10(17) cm(-2) while Ge implantations wer e done at 100 keV with a dose of 5 X 10(15) cm(-2). Samples implanted at 40 0 degrees C always show much higher intensities of luminescence than those implanted at room temperature. Electron spin resonance signals of the hot-i mplanted samples indicate relatively smaller amounts of nonradiative defect s than those of RT-implanted samples. It is concluded that the hot-implanta tion effectively enhances the intensity of defect-related photoluminescence by reducing the density of the nonradiative defects and introducing the ra diative defects, which contribute to the luminescence in SiO2 layers. (C) 1 999 American Institute of Physics. [S0003-6951(99)03507-X].