Surface smoothing of GaAs microstructure by atomic layer epitaxy

Authors
Hirose, S Yoshida, A Yamaura, M Munekata, H
Citation
S. Hirose et al., Surface smoothing of GaAs microstructure by atomic layer epitaxy, APPL PHYS L, 74(7), 1999, pp. 964-966
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
7
Year of publication
1999
Pages
964 - 966
Database
ISI
SICI code
0003-6951(19990215)74:7<964:SSOGMB>2.0.ZU;2-W
Abstract
We report a method to smooth the rough surface of GaAs microstructures. Thi s method is based on the nucleation process for atomic layer epitaxy which involves the self-limiting two-dimensional (one-monolayer) island formation . The method has been applied successfully to smooth the (111)A surfaces of chemically etched V-grooved GaAs structures as well as the (110) and (111) B side walls of selectively grown GaAs stripe structures. (C) 1999 American Institute of Physics. [S0003-6951(99)01607-1].