Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation

Flash-lamp annealing was used for activation and crystal recovery of highly aluminum-implanted 6H-SiC wafers. In comparison with conventional furnace annealing, the free hole concentration can be remarkably increased at high acceptor atom concentrations (greater than or equal to 5 X 10(20) cm(-3)). The lowest resistivity measured at room temperature was 0.01 Ohm cm. In thi s case, the layers are characterized by metallic conduction with weak depen dence of the hole concentration on the temperature. This effect is caused b y freezing-in of the enhanced solubility of aluminum in SiC at the extraord inary high temperature of about 2000 degrees C during the light-flash. (C) 1999 American Institute of Physics. [S0003-6951(99)01307-8].