Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

Authors
Jones, AM Jewell, JL Mabon, JC Reuter, EE Bishop, SG Roh, SD Coleman, JJ
Citation
Am. Jones et al., Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate, APPL PHYS L, 74(7), 1999, pp. 1000-1002
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
7
Year of publication
1999
Pages
1000 - 1002
Database
ISI
SICI code
0003-6951(19990215)74:7<1000:LIQWGW>2.0.ZU;2-G
Abstract
Long-wavelength photoluminescence at 1.35 mu m has been measured from an In GaAs quantum-well heterostructure deposited on disk-shaped InGaAs (x(In) = 0.05) compliant-film membranes. Strain-induced warping is avoided by utiliz ing a single pedestal to suspend each compliant-film disk over a GaAs subst rate. Cathodoluminescence (CL) spectra verify the long-wavelength emission, and panchromatic CL images reveal that strong emission occurs only on comp liant film structures supported by 1-mu m-diam pedestals. (C) 1999 American Institute of Physics. [S0003-6951(99)03007-7].