Negative differential resistance due to single-electron switching

Authors
Heij, CP Dixon, DC Hadley, P Mooij, JE
Citation
Cp. Heij et al., Negative differential resistance due to single-electron switching, APPL PHYS L, 74(7), 1999, pp. 1042-1044
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
7
Year of publication
1999
Pages
1042 - 1044
Database
ISI
SICI code
0003-6951(19990215)74:7<1042:NDRDTS>2.0.ZU;2-X
Abstract
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applicat ions for devices displaying NDR include amplification, logic, and memory ci rcuits. Our device consists of two Al/AlxOy islands that are strongly coupl ed by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport. (C) 1999 Americ an Institute of Physics. [S0003-6951(99)00607-5].