REFLECTANCE ANISOTROPY OSCILLATIONS OF THE HETEROEPITAXIAL GROWTH OF ALAS AND AL1-XGAXAS ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY

Authors
TAYLOR AG TURNER AR JOYCE BA PEMBLE ME
Citation
Ag. Taylor et al., REFLECTANCE ANISOTROPY OSCILLATIONS OF THE HETEROEPITAXIAL GROWTH OF ALAS AND AL1-XGAXAS ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY, Surface science, 375(2-3), 1997, pp. 367-373
Citations number
21
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
375
Issue
2-3
Year of publication
1997
Pages
367 - 373
Database
ISI
SICI code
0039-6028(1997)375:2-3<367:RAOOTH>2.0.ZU;2-C
Abstract
Reflectance anisotropy (RA) oscillations observed during the molecular beam epitaxial growth of AlAs and AlGaAs/AlAs heterostructures on sin gular GaAs(001) substrates have been investigated. A temperature depen dence study of the AlAs oscillations was carried out in the temperatur e range 500-580 degrees C and oscillations of large amplitude were rea dily detected. The effect of alloy stoichiometry on the oscillation am plitude was investigated and the amplitude was found to decrease as th e Ga content of the alloy was increased. The origin of these oscillati ons is discussed in terms of the microscopic nature of the step edges associated with the islands formed during growth. (C) 1997 Elsevier Sc ience B.V.