Obtaining device parameters of thermal microsensors is essential for evalua
ting their performances and simulation modeling. We report an sc electrical
method for extracting these parameters experimentally with relatively simp
le instrumentation. The basic parameters of resistive microsensors, the res
istance, temperature coefficient of resistance, thermal capacitance, and co
nductance, are derivable from the second harmonic signal of the output volt
age induced by a sinusoidal driving current. The results are compared with
other methods.