A finite element model of switching in polycrystalline ferroelastic ceramic
s is developed. It is assumed that a crystallite switches if the reduction
in mechanically driven potential energy of the system exceeds a critical va
lue per unit volume of switching material. Stress induced (i.e. ferroelasti
c) switching is a change of permanent strain in characteristic crystallogra
phic directions. Martensitic twinning is one example, but the strain respon
se of ferroelectric materials has the same characteristics. The model is su
itable for representing ferroelastic systems such as shape memory alloys an
d as a preliminary model for ferroelectric/ferroelastic materials such as p
erovskite piezoelectrics. In the simulations, each crystallite is represent
ed by a finite element and the crystallographic principal direction for eac
h crystallite is assigned randomly. Different critical values for the energ
y barrier to switching are selected to simulate stress vs strain hysteresis
loops of a ceramic lead lanthanum zirconate titanate (PLZT) at room temper
ature. The measured stress versus strain curves of polycrystalline ceramics
designated PZT-A and PZT-B are also reproduced by the model. (C) 1998 Else
vier Science Ltd. All rights reserved.