Ionized cluster beam deposition of antimony and bismuth films

The structure of antimony and bismuth thin firms grown on glass or Si(001) substrates by ionized cluster beam (ICB) deposition was characterized. X-ra y diffraction measurements were carried out to investigate the structures o f the films. The dependence of the crystalline orientation in antimony film s grown on the glass substrate on the applied voltage was observed. With in creasing applied voltage, the x-ray diffraction peaks from the (001) planes become weak and those from the (0ll) planes become relatively strong. In b ismuth films deposited on the Si(001) substrate at V-a = 3 kV, the dominant crystal face is the (012) plane. These results show that the crystalline o rientation of antimony and bismuth films can be controlled well according t o the applied voltage and substrates used in the ICE deposition.