Sol-gel derived TiO2 lead phthalocyanine photovoltaic cells

Citation
Sm. Tracey et al., Sol-gel derived TiO2 lead phthalocyanine photovoltaic cells, J SOL-GEL S, 13(1-3), 1998, pp. 219-222
Citations number
8
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
ISSN journal
09280707 → ACNP
Volume
13
Issue
1-3
Year of publication
1998
Pages
219 - 222
Database
ISI
SICI code
0928-0707(1998)13:1-3<219:SDTLPP>2.0.ZU;2-R
Abstract
Transparent TiO2 films were deposited onto a base electrode comprising an I nSnO2 glass substrate using the (alkoxide) sol-gel technique. Lead phthaloc yanine was subsequently vacuum sublimed onto the TiO2 surface. The resultin g InSnO2/TiO2/PbPc/Au heterojunction cell was investigated for its illumina ted current density/voltage, and spectral characteristics. The ideality fac tor (m) and saturation current (J(o)) were determined from current density/ voltage J(V) measurements. Photoelectrical measurements were conducted unde r both simulated solar radiation and within a wavelength range of 300-900 n m. This allowed calculation of open circuit voltage V-oc, short circuit cur rent J(sc), fill factor FF, quantum efficiency Z and the overall conversion efficiency. Typical photovoltaic characteristics were obtained indicating the potential of the device for solar cell applications. The power conversi on efficiency eta was similar to 0.001%; improvements are therefore require d. Transparent TiO2 films were deposited onto a base electrode comprising a n InSnO2 glass substrate using the (alkoxide) sol-gel technique. Lead phtha locyanine was subsequently vacuum sublimed onto the TiO2 surface. The resul ting InSnO2/TiO2/PbPc/Au heterojunction cell was investigated for its illum inated current density/voltage, and spectral characteristics. The ideality factor (m) and saturation current (J(o)) were determined from current densi ty/voltage J(V) measurements. Photoelectrical measurements were conducted u nder both simulated solar radiation and within a wavelength range of 300-90 0 nm. This allowed calculation of open circuit voltage V-oc, short circuit current J(sc), fill factor FF, quantum efficiency Z and the overall convers ion efficiency. Typical photovoltaic characteristics were obtained indicati ng the potential of the device for solar cell applications. The power conve rsion efficiency eta was similar to 0.001%; improvements are therefore requ ired.