Slb. Lana et Ab. Seddon, X-ray diffraction studies of sol-gel derived ORMOSILs based on combinations of tetramethoxysilane and trimethoxysilane, J SOL-GEL S, 13(1-3), 1998, pp. 461-466
ORMOSILs have been prepared in the series TMOSx.MTMS(100-x) (where TMOS is
tetramethoxysilane; MTMS is methyltrimethoxysilane; x is mol% silane with r
espect to total silane for 0 less than or equal to x less than or equal to
100) by means of acid catalyzed, sol-gel processing. After drying at 60 deg
rees C, small bulk samples were obtained of excellent optical clarity. Powd
er X-ray diffraction (XRD) patterns, in the range of 5 to 60 degrees 2 thet
a, were compared with that of fused silica. All the prepared samples were a
morphous. Fused silica exhibits one broad peak, d(2) centered at d-spacing
4.12 Angstrom. For the TMOS100 silica xerogel, the analogous broad peak had
shifted slightly, to be centered at 3.88 Angstrom; and remained in about t
he same position as x was decreased for the series TMOSx.MTMS(100-x). In ad
dition, a second, broad peak, dl, was observed for the ORMOSIL series cente
red at the d-spacing 8.7 Angstrom for MTMS100 (i.e., x = 0) and increasing
smoothly as x was increased, reaching 11.3 Angstrom for x = 70, and >11.3 A
ngstrom for x > 70. The intensity of d(1) was found to have trebled, relati
ve to the intensity of d(2), on increasing the organic character of the mat
rix from TMOS70.MTMS30 to MTMS100.
The d(2) peak appearing at about 4 Angstrom for both fused silica and the O
RMOSILs is assumed to be associated with the spacing between silicon atoms
connected by means of an oxygen bridge. The Si-O-Si angle for silica xeroge
ls is known to depend upon the nature of the sol-gel processing and is bigg
er than that of fused silica.
The d(1) peak may be associated with the spacing between silicons attached
to methyl groups and indicative of channels of methyl groups in the structu
re. Alternatively, the d(1) peak may have its origin in a preferred, discre
te structural unit in the matrix for instance cubane based on a octameric s
ilicon arrangement.