Vanadium doped sol-gel TiO2 coatings

A study of the experimental conditions required to obtain vanadium doped so l-gel TiO2 coatings is presented. Tetraethyl orthotitanate was employed as the TiO2 source and VCl3, VOSO4. H2O and VOSO4 dissolved in H2SO4 were empl oyed as vanadium sources. Dip coating has been used to produce coatings on silicon wafers, spectral c arbon electrodes and titanium electrodes. Both supported and unsupported fi lms have been studied by UV-Vis spectra, IR spectroscopy and X-ray diffract ion (XRD). The measurements have been made on samples as prepared and treat ed thermally at temperatures between 100 degrees C and 300 degrees C. The t hermal treatment temperatures have been established from DTA/TGA measuremen ts. The vanadium doped sol-gel TiO2 coatings have been tested as sensors for re dox potential measurements in electrochemical processes. The influence of b oth the thickness of films and the nature of substrate has been investigate d.