Ferroelectric PZT thin films by sol-gel deposition

Citation
Im. Reaney et al., Ferroelectric PZT thin films by sol-gel deposition, J SOL-GEL S, 13(1-3), 1998, pp. 813-820
Citations number
14
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
ISSN journal
09280707 → ACNP
Volume
13
Issue
1-3
Year of publication
1998
Pages
813 - 820
Database
ISI
SICI code
0928-0707(1998)13:1-3<813:FPTFBS>2.0.ZU;2-R
Abstract
Sol-gel spin coating has a low "thermal budget," is cheap compared to vacuu m-based techniques and is now routinely used to produce dense, pore-free fe rroelectric films. PbZrxTi(1-x)O-3 (PZT) is utilized in most applications b ecause it has a large remanent polarization, high piezo- and pyroelectric c oefficients and optimized electromechanical coupling factors, depending on precise composition. This paper will review some of the principles and appl ications of PZT films and highlight using transmission electron microscopy some of the basic problems and solutions involved in producing device-quali ty material on Si-substrates.