Sol-gel spin coating has a low "thermal budget," is cheap compared to vacuu
m-based techniques and is now routinely used to produce dense, pore-free fe
rroelectric films. PbZrxTi(1-x)O-3 (PZT) is utilized in most applications b
ecause it has a large remanent polarization, high piezo- and pyroelectric c
oefficients and optimized electromechanical coupling factors, depending on
precise composition. This paper will review some of the principles and appl
ications of PZT films and highlight using transmission electron microscopy
some of the basic problems and solutions involved in producing device-quali
ty material on Si-substrates.