Acetic acid based sol-gel PLZT thin films: Processing and characterization

Citation
B. Malic et al., Acetic acid based sol-gel PLZT thin films: Processing and characterization, J SOL-GEL S, 13(1-3), 1998, pp. 833-836
Citations number
9
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
ISSN journal
09280707 → ACNP
Volume
13
Issue
1-3
Year of publication
1998
Pages
833 - 836
Database
ISI
SICI code
0928-0707(1998)13:1-3<833:AABSPT>2.0.ZU;2-X
Abstract
PLZT 4/65/35 thin films were prepared by the acetic acid based sol-gel rout e. The choice of lanthanum precursor, i.e., acetate or nitrate, influences the functional group content of formamide modified sols and the microstruct ure of the thin films. The lanthanum nitrate based PLZT thin film deposited on Si/SiO2/TiO2/Pt/TiO2 substrate has a columnar perovskite grain structur e, while the lanthanum acetate based one is characterized by a lead-silicon containing reaction layer beneath the platinum electrode. Although lead is depleted from the PLZT thin film the perovskite structure is retained by t he use of the top layer with a large excess of PbO.