Modification of sol-gel derived indium oxide thin films using ultraviolet l
asers was investigated. Irradiation by an ArF excimer (6.4 eV) and the four
th harmonic generation of a Nd:YAG laser (4.7 eV) was found to be effective
in crystallization with a loss of hydroxyl groups and a decrease in the sh
eet resistance of the sol-gel films. Transparent crystalline indium oxide f
ilms were successfully obtained by 6.4 eV laser irradiation at fluences bel
ow 20 mJ/(cm(2) . shot), whereas degradation of the films was induced by a
relatively high-fluence beam.