Ultraviolet-laser-induced crystallization of sol-gel derived indium oxide films

Authors
Imai, H Tominaga, A Hirashima, H Toki, M Aizawa, M
Citation
H. Imai et al., Ultraviolet-laser-induced crystallization of sol-gel derived indium oxide films, J SOL-GEL S, 13(1-3), 1998, pp. 991-994
Citations number
18
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
ISSN journal
09280707 → ACNP
Volume
13
Issue
1-3
Year of publication
1998
Pages
991 - 994
Database
ISI
SICI code
0928-0707(1998)13:1-3<991:UCOSDI>2.0.ZU;2-M
Abstract
Modification of sol-gel derived indium oxide thin films using ultraviolet l asers was investigated. Irradiation by an ArF excimer (6.4 eV) and the four th harmonic generation of a Nd:YAG laser (4.7 eV) was found to be effective in crystallization with a loss of hydroxyl groups and a decrease in the sh eet resistance of the sol-gel films. Transparent crystalline indium oxide f ilms were successfully obtained by 6.4 eV laser irradiation at fluences bel ow 20 mJ/(cm(2) . shot), whereas degradation of the films was induced by a relatively high-fluence beam.