Temperature distribution in the cells of low-voltage power VDMOS transistor

Authors
Pavlovic, Z Manic, I Prijic, Z Stojadinovic, N
Citation
Z. Pavlovic et al., Temperature distribution in the cells of low-voltage power VDMOS transistor, MICROELEC J, 30(2), 1999, pp. 109-113
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
30
Issue
2
Year of publication
1999
Pages
109 - 113
Database
ISI
SICI code
0026-2692(199902)30:2<109:TDITCO>2.0.ZU;2-Q
Abstract
This paper covers a numerical analysis of the self-heating effect and the e ffect of mutual heating of nearest neighbouring cells in low-voltage power VDMOS transistors. A temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS device operating in b oth linear and saturation region was calculated on the basis of proposed th eoretical model. (C) 1999 Elsevier Science Ltd. All rights reserved.