A new study on spin-on-silica for multilevel interconnect applications

In this study, a new method for low temperature oxide deposition is discuss ed. Silicon dioxide was formed on silicon from silicic acid solution by usi ng spin-on technology. Mechanical and planarizing properties of the silicon dioxide were investigated. Using this oxide a metal-silicon dioxide-wafer (MOS) structure was manufactured. Breakdown field strength and trap density of the MOS capacitance was measured. The method discussed in this paper sh ows a very low carbon contamination risk and does not suffer from crack for mation. It is therefore suitable for a Variety of applications in VLSI and ULSI fabrication, which require low process temperatures or where high temp eratures have drawbacks. (C) 1999 Elsevier Science Ltd. All rights reserved .