In this study, a new method for low temperature oxide deposition is discuss
ed. Silicon dioxide was formed on silicon from silicic acid solution by usi
ng spin-on technology. Mechanical and planarizing properties of the silicon
dioxide were investigated. Using this oxide a metal-silicon dioxide-wafer
(MOS) structure was manufactured. Breakdown field strength and trap density
of the MOS capacitance was measured. The method discussed in this paper sh
ows a very low carbon contamination risk and does not suffer from crack for
mation. It is therefore suitable for a Variety of applications in VLSI and
ULSI fabrication, which require low process temperatures or where high temp
eratures have drawbacks. (C) 1999 Elsevier Science Ltd. All rights reserved
.