New CMOS fully differential difference transconductors and application to fully differential filters suitable for VLSI

New CMOS voltage controlled fully differential difference transconductors ( FDDT) are presented. The basic structure of the proposed transconductors is based on the current Linearization of basic MOS cells in different configu rations consisting from two or four NMOS matched transistors operating in t he saturation region. The proposed transconductors are used to design fully differential second order lowpass, bandpass and highpass filters suitable for VLSI. PSpice simulation results for the proposed fully differential dif ference transconductors and their filter applications indicating the linear ity range and verifying the analytical results are also given. (C) 1999 Els evier Science Ltd. All rights reserved.