Citation
H. Xia et al., Range distribution of P-31 ions implanted into Ge, NUCL INST B, 149(1-2), 1999, pp. 1-6
Citations number
12
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
149
Issue
1-2
Year of publication
1999
Pages
1 - 6
Database
ISI
SICI code
0168-583X(199901)149:1-2<1:RDOPII>2.0.ZU;2-7
Abstract
We have measured the depth distribution of P-31 ions implanted at 50 keV to
a fluence of 7 x 10(15)/cm(2) into Ge using two methods: first, the surfac
e-sensitive particle-induced X-ray excitation (PIXE) technique utilizing io
n-induced X-ray emission has been exploited for absolute non-destructive an
alysis; second, secondary ion mass spectrometry has been performed to obtai
n the relative depth distribution for the same target. (C) 1999 Elsevier Sc
ience B.V. All rights reserved.