Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation

Authors
Fukumi, K Chayahara, A Ohora, K Kitamura, N Horino, Y Fujii, K Makihara, M Hayakaya, J Ohno, N
Citation
K. Fukumi et al., Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation, NUCL INST B, 149(1-2), 1999, pp. 77-80
Citations number
15
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
149
Issue
1-2
Year of publication
1999
Pages
77 - 80
Database
ISI
SICI code
0168-583X(199901)149:1-2<77:POCSGP>2.0.ZU;2-N
Abstract
2 MeV Cu+ ions were implanted in silica glass at doses from 1x10(15) to 1x1 0(17) ions/cm(2). Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminesce nce intensity was the highest at a dose of 1x10(16) Cu+ ions/cm(2) in the p resent implantation condition. It was deduced that co-implantation of oxyge n ions stabilizes the monovalent copper ions in silica glass. (C) 1999 Else vier Science B.V. All rights reserved.