Modification of the high-doped GaAs surface region by its exposure to 150 keV proton beam

Citation
E. Pincik et al., Modification of the high-doped GaAs surface region by its exposure to 150 keV proton beam, NUCL INST B, 149(1-2), 1999, pp. 81-88
Citations number
21
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
149
Issue
1-2
Year of publication
1999
Pages
81 - 88
Database
ISI
SICI code
0168-583X(199901)149:1-2<81:MOTHGS>2.0.ZU;2-#
Abstract
The interaction of 150 keV protons with a high-doped n-GaAs crystal has bee n investigated by X-ray diffraction at grazing incidence (XRDGI), photorefl ectance (PR), photoluminescence (PL) and scanning electron microscopy (SEM) . The measurements confirmed that simultaneous with almost full loss of the semiconducting properties of the surface crystal region after applying the 10(15) proton/cm(2) dose, (111) oriented extended type of crystalline defe ct was formed. These defects have been identified as the (111) planes rotat ed by similar to 40 degrees with respect to the (111) planes of the undistu rbed GaAs cubic structure. They are located at the hydrogenated GaAs layer/ GaAs interface and induced by two effects: formation of microcracks prolong ed throughout the implanted layer in 111 direction up to undisturbed GaAs c rystal and strain arising at the corresponding interface. The role of the s urface microcracks formed in the uppermost part of the reference sample as a consequence of unsuitable mechano-chemical polishing procedures in the ev olution of the effect observed is also discussed. (C) 1999 Elsevier Science B.V. All rights reserved.