SILICON-ON-INSULATOR 2X2 SYMMETRICAL OPTICAL SWITCH BASED ON TOTAL INTERNAL-REFLECTION

Based on the large cross-section single-mode rib waveguide condition, the total internal reflection and the free-carrier plasma dispersion e ffect, a silicon-on-insulator (SOI) 2 x 2 symmetric optical waveguide switch With a transverse injection structure has been proposed and fab ricated. in which the SOI technique utilizes silicon and silicon dioxi de thermal bonding and back-polishing. The device performance is measu red at the wavelength of 1.3 mu m. It shows that the crosstalk and ins ertion loss are less than -18.1 and 4.8 dB, respectively, at an inject ion current of 60 mA. and response time is 100 ns.