Processes of the nucleation and motion of kinks, determining the dislocatio
n mobilities in crystals with high Peierls barriers, are reviewed. Various
mechanisms of an influence of point defects on the kink dynamics are analyz
ed. To demonstrate these mechanisms experimental data are presented obtaine
d with two-level intermittent loading of Si, Ge, and bulk SiGe alloy single
crystals. The instability of a dislocation glide in SiGe crystals has been
discovered, and modes are revealed of the linear and nonlinear kink drift.
The experimental data are analyzed in the framework of models, considering
the interaction of point defects with a dislocation and a kink.