Partial dislocation source in InSb: A new mechanism

Partial dislocation nucleation and multiplication in III-V semiconductor co mpounds are usually ascribed to the difference in mobility between alpha an d beta partials. These differences in mobility increase when the temperatur e decreases, so that the contribution of twinning to the deformation mechan isms becomes important for high stresses and low temperatures. Starting fro m transmission electron microscopic observations of plastically deformed In Sb under high stresses and hydrostatic pressure at room temperature, showin g the multiplication of alpha as well as beta partial dislocations, a model for the partial dislocation multiplication is proposed. This model does no t rely on the difference in alpha and beta partial dislocation mobilities b ut on the formation of Lomer-Cottrell sessile dislocations issued from disl ocation dipoles.