Extended defects formation in Si crystals by clustering of intrinsic pointdefects studied by in-situ electron irradiation in an HREM

In situ irradiation experiments in a high resolution electron microscope JE OL-4000EX at room temperature resulted in discovery of the isolated and com bined clustering of vacancies and self-interstitial atoms on {111}- and {11 3}-habit planes both leading to an extended defect formation in Si crystals . The type of the defect is strongly affected by the type of supersaturatio n of point defects depending on the crystal thickness during electron irrad iation. Because of the existence of energy barriers against recombination o f interstitials with the extended aggregates of vacancies, a large family o f intermediate defect configurations (IDCs) is formed on {113}- and {111}-h abit planes at a low temperature under interstitial supersaturation in addi tion to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.