Influence of dislocations on nitrogen-oxygen complex in silicon

The influence of dislocations on nitrogen-oxygen (N-O) complexes in nitroge n-doped Czochralski (NCZ) silicon was investigated. It was found that N-O c omplexes were generated during annealing at 650 degrees C for 10 min. In th e early stage of annealing the amount of the N-O complexes in NCZ silicon w ith dislocations was almost the same as in dislocation-free NCZ silicon. Ho wever, the N-O complexes in NCZ silicon with dislocations were annihilated after annealing for only 2 h, while those complexes in dislocation-free NCZ silicon were annihilated after annealing for 60 h. It is considered that t he formation of N-O complexes is suppressed by dislocations and its mechani sm is also discussed.