TEM and SIMS analyses of InP submitted to single and double implantation ha
ve allowed to establish that the end of range (EOR) dislocation loops, most
ly of the Frank type, are efficient gettering sites for the implanted Fe do
pant. The gettering rate increases with increasing annealing temperature, d
ue to both increased Fe mobility and loop coarsening. Besides the EOR loops
, other extended defects, e.g. the tangled networks of dislocations at the
interfaces of bands of twins, are seen to getter Fe. Such gettering strongl
y affects the diffusion of Fe upon annealing.