Structural and electrical properties of metal silicide precipitates in silicon

This paper summarizes current understanding of structural and electronic pr operties of metal silicide precipitates in silicon and their interrelation. Combined studies of high-resolution transmission electron microscopy and d eep level transient spectroscopy together with numerical simulations show t hat the bounding dislocation of nickel silicide platelets is the key to und erstand their rapid growth and electrical properties. Different misfit rela xation phenomena govern the structural evolution of copper silicide precipi tates from their early stages to the well-known colony growth. This evoluti on involves different types of secondary defects indicating that the deep b and-like states observed throughout this process are associated with the si licide precipitates themselves.