Electrical study of dislocated Si- and C-faces of n-type 6H-SiC

The (0001)(Si) and (<000(1)over bar>)(C) faces of n-type 6H-SiC have been s cratched and annealed to introduce fresh dislocations. TEM investigations o n the as-deformed C-face show that this leads predominantly to the nucleati on of partial dislocations of both core natures depending on the distance f rom scratches whereas on the Si-face predominantly partial Si(g) dislocatio ns are created. By Thermally Stimulated Capacitance (TSC), it was found tha t the majority carrier traps resulting from the deformation are mainly loca ted in the upper third of the band-gap whatever the deformed face may be. H owever, the rather low dislocation density is not sufficient to explain the observed large compensation, and other defects generated by the deformatio n step must be taken into account.