Citation
D. Klinger et al., Study of extended defect structure induced by pulsed laser annealing in implanted silicon crystals, PHYS ST S-A, 171(1), 1999, pp. 389-394
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965
→ ACNP
Volume
171
Issue
1
Year of publication
1999
Pages
389 - 394
Database
ISI
SICI code
0031-8965(19990116)171:1<389:SOEDSI>2.0.ZU;2-I
Abstract
An analysis of extended defects generated during annealing by pulsed excime
r laser radiation in silicon crystals implanted with Ge ions is presented.
The investigation was performed by means of two complementary methods: the
interference-polarizing microscopy and the Lang X-ray transmission topograp
hy. The existence of extended defects was revealed. It has been stated that
the distribution of these defects depends on the distribution of the power
density in the laser beam cross-section.